| PART |
Description |
Maker |
| SCE5740 SCE5741 SCE5742 SCE5743 SCE5744 SCE5745 |
Dot Addressable Intelligent Display? Devices
Dot Addressable Intelligent Display㈢ Devices
|
OSRAM GmbH
|
| MIP517 |
Silicon MOSFET type integrated circuit
Power Device - IPD - For Lamp and Solenoid Driver
|
Panasonic Semiconductor
|
| MIP514 |
Power Device - IPD - For Lamp and Solenoid Driver
SILICON MOSFET TYPE INTEGRATED CIRCUIT
|
Panasonic Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PXA168 |
High Performance, Highly Integrated Processor Scalable to 1.2 GHz for Cost-Sensitive, Intelligent Consumer and Embedded Devices
|
Marvell Technology Group Ltd.
|
| HDSP2113S HDSP2110S HDSP2114S HDSP2112S HDSP2115S |
From old datasheet system
0.200" 8-Character 5x7 Dot Matrix Parallel Input Alphanumeric Intelligent Display Devices
|
Siemens Semiconductor Group
Infineon
|
| MIP170 |
IPD
|
Panasonic
|
| SCDV5543 SCDV5541 SCDV5540 |
Vertical Format 0.123" 4-Character 5x5 Dot Matrix Serial Input Dot Addressable Intelligent Display " Devices
From old datasheet system
|
Infineon
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| PLC18V8ZIADH PLC18V8ZIDB PLC18V8Z25A PLC18V8ZIAA P |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PQCC20
Zero standby power CMOS versatile PAL devices OT PLD, 40 ns, PDSO20
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PDSO20
|
NXP Semiconductors N.V.
|
| IPS521 IPS521S |
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH 充分保护高压侧功率MOSFET开
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IPS5451 IPS5451S IPS5451STRL |
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
International Rectifier
|
